| |

[Alt02] | P.P. Altermatt, J.O. Schumacher, A. Cuevas, M.J. Kerr, S.W. Glunz, R.R. King, G. Heiser, A. Schenk, "Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters," *Journal of Applied Physics*, **92** (6), pp. 3187–3197, 2002. |

[Alt06a] | P.P. Altermatt, A. Schenck and G. Heiser, "A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P," *Journal of Applied Physics*, **100** 113714, 2006. |

[Alt06b] | P.P. Altermatt, A. Schenck, B. Schmithüsen and G. Heiser, "A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation," *Journal of Applied Physics*, **100** 113715, 2006. |

[Blu74] | W. Bludau, A. Onton, and W. Heinke, "Temperature dependence of the band gap in silicon," *Journal of Applied Physics*, **45** (4), pp. 1846–1848, 1974. |

[Cou14] | R. Couderc, M. Amara and M. Lemiti, "Reassessment of the intrinsic carrier density temperature dependence in crystalline silicon," *Journal of Applied Physics*, **115** 093705, 2014. |

[del85a] | J. del Alamo, S. Swirhun, and R. M. Swanson, "Simultaneous measurement of hole lifetime, hole mobility and band gap narrowing in heavily doped n-type silicon," *Proceedings of the 18th IEEE PVSC*, Las Vegas, pp. 290–293, 1985. |

[del85b] | J. del Alamo, S. Swirhun, and R. M. Swanson, "Measuring and modeling minority carrier transport in heavily doped silicon," *Solid-State Electronics*, **28**, pp. 47–54, 1985. |

[Gre90] | M.A. Green, "Intrinsic concentration, effective densities of states, and effective mass in silicon," *Journal of Applied Physics*, **67** (6), pp. 2944–2954, 1990. |

[Päs02] | R. Pässler, "Dispersion-related description of temperature dependencies of band gaps in semicondutors," *Physical Review B*, **6**, 085201, 2002. |

[McI10] | K.R. McIntosh and P.P. Altermatt, “A freeware 1D emitter model for silicon solar cells," *Proceedings of the 35th IEEE PVSC*, Honolulu, paper 531, pp. 2188–2193, 2010. |

[Sch98] | A. Schenk, "Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation," *Journal of Applied Physics*, **84** (7), pp. 3684–3695, 1998. |

[Sen08] | SENTAURUS, User manual A-2008.09, Synopsys Inc. Mountain View, CA, www.synopsys.com/products/tcad/tcad.html, 2008. |