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Dopant species
Dopant concentration NA cm–3
Temperature T K
Excess carriers Δn cm–3
SRH   τn0 μs τp0 μs
      EtEi eV
Force Δn = Δp?
SRH parameters to define
Significant figures  
Physical models:
Intrinsic band gap   Band gap multiplier
Density of states  
Dopant ionisation  
Carrier statistics  
Band gap narrowing  
Mobility model  


  Recomb. Rate Proportion Lifetime Diffusion lengths (μm)
  (cm–3s–1) (%) (μs) Le Lh
  Radiative 2.12E+16 0.32 4.71E+4 1.26E+4 7.45E+3
  Auger 5.20E+15 0.08 1.92E+5 2.54E+4 1.50E+4
  Shockley–Read–Hall 6.67E+18 99.61 1.50E+2 7.11E+2 4.20E+2
  Total or Effective 6.69E+18 100.00 1.49E+2 7.09E+2 4.20E+2



Plot constituents

Effective lifetime vs Δn = Δp

Temperature Energy

Computation time 0.000 s.

Comments? Bugs? Errors? Compliments?

Welcome to the recombination calculator

This calculator determines the effective lifetime and recombination rate in crystalline silicon.

It calculates radiative recombination, Auger recombination, and Shockley–Read–Hall recombination as a function of the dopant concentration, excess carrier concentration, or the separation of quasi-Fermi levels (sometimes called the implied open-circuit voltage).


Neither PV Lighthouse nor any person related to the compilation of this calculator make any warranty, expressed or implied, or assume any legal liability or responsibility for the accuracy, completeness or usefulness of any information disclosed or rendered by this calculator.

Version 1.2.2, 17-December-2013

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